BUK9608-55-T datasheet

Маркировка

BUK9608-55-T
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BUK9608-55-T Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: SINGLE Number of Terminals: 2 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 75 A DS Breakdown Voltage-Min: 55 V Avalanche Energy Rating (Eas): 500 mJ Drain-source On Resistance-Max: 0.0080 ohm Pulsed Drain Current-Max (IDM): 240 A
Количество страниц

8 шт.
Формат

PDF
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Размер файла

57,16 KB